Strain-induced structural and electronic phase transitions in ZrSe2: high pressure X-ray diffraction and Raman studies

被引：0
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作者：
Bishnupada Ghosh
Mrinmay Sahu
Debabrata Samanta
Goutam Dev Mukherjee
机构：
[1] Indian Institute of Science Education and Research Kolkata,National Center for High Pressure Studies, Department of Physical Science
来源：
Bulletin of Materials Science | / 45卷
关键词：
Transition metal dichalcogenides; X-ray diffraction; Raman spectroscopy; phase transitions; pressure transmitting medium;
D O I：
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学科分类号：
摘要：
ZrSe2 exhibits a pressure-induced gradual structural phase transition from hexagonal 1T phase to a monoclinic phase, which starts around 5.9 GPa and completes around 14.8 GPa. Anomalies found in high pressure Raman measurements indicate the presence of a possible electronic phase transition mediated by the differential strain produced inside the sample.
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