Control of power characteristics of ion flow in plasma-etching reactor based on beam-plasma discharge

被引：0
|
作者：
N. V. Isaev
I. L. Klykov
E. G. Shustin
机构：
[1] Russian Academy of Sciences,Kotel’nikov Institute of Radio Engineering and Electronics (Fryazino Branch)
来源：
Plasma Physics Reports | 2011年 / 37卷
关键词：
Plasma Physic Report; Substrate Holder; Plasma Potential; Plasma Chamber; Floating Potential;
D O I：
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中图分类号：
学科分类号：
摘要：
It is shown that on the basis of the earlier revealed effect of generating the ion flow in the beam-plasma discharge from the discharge axis, a plasma processing reactor can be created for low-energy etching of semiconductor structures. The possibility of easily controlling the density and energy of ion flow by means of varying the potential of the discharge collector is demonstrated. The charge compensation of the ion flow incident on the nonconducting surface is implemented using the modulation of the potential of the substrate holder as well as the plasma-potential modulation.
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页码：1104 / 1108
页数：4
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