The effect of silicon on maize growth under cadmium stress

被引:1
|
作者
S. Dresler
M. Wójcik
W. Bednarek
A. Hanaka
A. Tukiendorf
机构
[1] Maria Curie-Skłodowska University,Department of Plant Physiology, Institute of Biology and Biochemistry
[2] University of Life Sciences in Lublin,Department of Agricultural and Environmental Chemistry
来源
关键词
Cd stress; silicon; growth parameters; phytochelatin;
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学科分类号
摘要
The effects of silicon (Si) supply (0, 0.1, 0.5, 1.5, 3.0, and 5.0 mM Si) on maize seedling growth, Si and Cd accumulation, and thiol peptide synthesis under Cd stress conditions were studied. The addition of Si to the growth medium resulted in the significantly higher Si accumulation in plant tissues. The average values of growth parameters (root and shoot fresh weights and root net elongation rates) showed a beneficial role of Si on growth of non-Cd-treated plants, while there was no evidence that silicon mitigated Cd toxicity in maize seedlings. Cadmium exposure depressed plant growth and induced phytochelatin (PC) synthesis. The accumulation of Cd and PCs in roots significantly decreased with increasing Si concentrations in the nutrient solution; however, their accumulation in shoots was not changed in the presence of Si.
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页码:86 / 92
页数:6
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