Current flow through metal shunts in ohmic contacts to n+-Si

被引：0

作者：

A. V. Sachenko

A. E. Belyaev

V. A. Pilipenko

T. V. Petlitskaya

V. A. Anischik

N. S. Boltovets

R. V. Konakova

Ya. Ya. Kudryk

A. O. Vinogradov

V. N. Sheremet

机构：

[1] National Academy of Sciences,Lashkaryov Institute of Semiconductor Physics

[2] Branch of the Scientific-Technical Center “Belmicrosystems” of the Public Corporation “INTEGRAL”,State Center “Belmicroanalysis”

[3] Belarussian State University,undefined

[4] “Orion” Research Institute,undefined

来源：

Semiconductors | 2014年 / 48卷

关键词：

Residual Pressure; Metallization Layer; Specific Contact Resistance; Debye Screening Length; Metal Shunt;

D O I：

暂无

中图分类号：

学科分类号：

摘要：

It is experimentally found that an ohmic contact based on Au-Pt-Ti-Pd-n+-Si metallization is formed due to nanoscale metal shunts containing Si, Au, and Pt in the region of the interface with n+-Si, which appears during heat treatment at T = 450°C for 10 min in a vacuum chamber with a residual pressure of 10−6 Torr. The high density of shunts adjoining dislocations and other imperfections is confirmed by the temperature dependence of the specific contact resistance ρc(T). The density of conductive dislocations, calculated from the temperature dependence of ρc is ∼5 × 109 cm−2 which correlates with the density of structural defects, determined by the etch pits after removal of the metallization layers.

引用

页码：492 / 496

页数：4

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