Observation of long-lived interlayer excitons in monolayer MoSe2–WSe2 heterostructures

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作者
Pasqual Rivera
John R. Schaibley
Aaron M. Jones
Jason S. Ross
Sanfeng Wu
Grant Aivazian
Philip Klement
Kyle Seyler
Genevieve Clark
Nirmal J. Ghimire
Jiaqiang Yan
D. G. Mandrus
Wang Yao
Xiaodong Xu
机构
[1] University of Washington,Department of Physics
[2] University of Washington,Department of Materials Science and Engineering
[3] University of Tennessee,Department of Physics and Astronomy
[4] Oak Ridge National Laboratory,Materials Science and Technology Division
[5] University of Tennessee,Department of Materials Science and Engineering
[6] University of Hong Kong,Department of Physics and Center of Theoretical and Computational Physics
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Van der Waals bound heterostructures constructed with two-dimensional materials, such as graphene, boron nitride and transition metal dichalcogenides, have sparked wide interest in device physics and technologies at the two-dimensional limit. One highly coveted heterostructure is that of differing monolayer transition metal dichalcogenides with type-II band alignment, with bound electrons and holes localized in individual monolayers, that is, interlayer excitons. Here, we report the observation of interlayer excitons in monolayer MoSe2–WSe2 heterostructures by photoluminescence and photoluminescence excitation spectroscopy. We find that their energy and luminescence intensity are highly tunable by an applied vertical gate voltage. Moreover, we measure an interlayer exciton lifetime of ~1.8 ns, an order of magnitude longer than intralayer excitons in monolayers. Our work demonstrates optical pumping of interlayer electric polarization, which may provoke further exploration of interlayer exciton condensation, as well as new applications in two-dimensional lasers, light-emitting diodes and photovoltaic devices.
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