Reduction of efficiency droop in GaInN/GaN light-emitting diodes with thick AlGaN cladding layers

被引：0

作者：

An Mao

Jaehee Cho

E. Fred Schubert

Joong Kon Son

Cheolsoo Sone

Woo Jin Ha

Sunyong Hwang

Jong Kyu Kim

机构：

[1] Rensselaer Polytechnic Institute,Future Chips Constellation, Department of Electrical, Computer, and Systems Engineering

[2] Corporate R&D Institute,LED Lab

[3] Samsung LED,Department of Materials Science and Engineering

[4] Pohang University of Science and Technology,undefined

来源：

Electronic Materials Letters | 2012年 / 8卷

关键词：

GaN; light-emitting diodes; efficiency droop; laser diode;

D O I：

暂无

中图分类号：

学科分类号：

摘要：

GaInN/GaN multiple-quantum-well light-emitting diodes (LEDs) with 0.4 μm-thick AlGaN cladding layers and two quantum wells (QWs), designed for investigating the origin of efficiency droop, are demonstrated to have a lower efficiency droop than typical GaInN/GaN LEDs with 5 QWs. Considering the much less electron leakage over the active region, and the larger carrier density due to the smaller active volume of the LED with AlGaN cladding layers than those of the typical LED, it is suggested that the dominant mechanism responsible for the efficiency droop is electron leakage rather than the Auger recombination which scales with the cubic power of the carrier density.

引用

页码：1 / 4

页数：3

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