Relaxation of light-induced metastable state of boron-doped p-type a-Si:H

被引：0
作者：
A. G. Kazanskii
E. V. Larina
机构：
[1] M. V. Lomonosov Moscow State University,
来源：
Semiconductors | 1998年 / 32卷
关键词：
Activation Energy; Magnetic Material; Energy Distribution; Main Parameter; Electromagnetism;
D O I：
暂无
中图分类号：
学科分类号：
摘要：
Relaxation of the dark conductivity of boron-doped a-Si: H films after illumination in the temperature range 360–470 K has been studied. It is shown that the measuring conductivity relaxation after illumination under different conditions (illumination time and temperature) makes it possible to separately investigate relaxation of the concentration of light-induced metastable defects of the “dangling-bonds” type and relaxation of the concentration of metastable states associated with impurity atoms. In both cases the relaxation obeys a stretched-exponential law. The main parameters of both relaxations and their temperature dependence have been measured. The experimental results can be explained within the framework of a model of the annealing activation energy distribution for light-induced metastable states.
引用
收藏
页码：105 / 108
页数：3
相关论文
共 31 条
[1]  
Staebler D. L.(1977)undefined Appl. Phys. Lett. 31 292-undefined
[2]  
Wronski C. R.(1988)undefined Phys. Rev. B 37 1020-undefined
[3]  
Jackson W. B.(1987)undefined Phys. Rev. B 36 6217-undefined
[4]  
Kakalios J.(1987)undefined Appl. Phys. Lett. 51 1804-undefined
[5]  
Jackson W. B.(1993)undefined Fiz. Tekh. Poluprovodn. 27 1693-undefined
[6]  
Moyer M. D.(1996)undefined J. Non-Cryst. Solids 198–200 470-undefined
[7]  
Jang J.(1987)undefined Phys. Rev. B 36 9378-undefined
[8]  
Park S. C.(1992)undefined Fiz., Astron. 33 70-undefined
[9]  
Kim S. C.(1997)undefined Fiz. Tekh. Poluprovodn. 31 347-undefined
[10]  
Lee C.(1993)undefined Appl. Phys. Lett. 62 594-undefined
1234