High-quality ZnO/GaN/α-Al2O3 heteroepitaxial structures grown by CVD

被引：0

作者：

B. M. Ataev

I. K. Kamilov

W. V. Lundin

V. V. Mamedov

A. K. Omaev

Sh. -M. O. Shakhshaev

机构：

[1] Russian Academy of Sciences,Institute of Physics, Dagestan Scientific Center

[2] Russian Academy of Sciences,Ioffe Physicotechnical Institute

来源：

Technical Physics Letters | 2001年 / 27卷

关键词：

Oxide; Zinc; Diffraction Pattern; Surface Morphology; Oxide Layer;

D O I：

暂无

中图分类号：

学科分类号：

摘要：

The first results on the preparation of (0001)ZnO/(0001)GaN/(0001) α-Al2O3 heteroepitaxial structures by CVD in a low-pressure flow-type reactor are reported. Study of the surface morphology and X-ray diffraction patterns showed high structural perfection of the zinc oxide layer, with a block misorientation in the basal plane not exceeding 21′. The photoluminescence spectra of samples exhibited dominating emission in the exciton region.

引用

页码：55 / 57

页数：2

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