Intense terahertz emission from undoped GaAs/n-type GaAs and InAs/AlSb structures grown on Si substrates in the transmission-geometry excitation

被引：0
作者：
E. Estacio
S. Takatori
M. H. Pham
T. Yoshioka
T. Nakazato
M. Cadatal-Raduban
T. Shimizu
N. Sarukura
M. Hangyo
C. T. Que
M. Tani
T. Edamura
M. Nakajima
J. V. Misa
R. Jaculbia
A. Somintac
A. Salvador
机构：
[1] Osaka University,Institute of Laser Engineering
[2] University of Fukui,Research Center for Development of Far
[3] Hamamatsu Photonics K.K.,Infrared Region
[4] The University of Tokyo,Central Research Laboratory
[5] University of the Philippines,Institute for Solid State Physics
来源：
Applied Physics B | 2011年 / 103卷
关键词：
GaAs; AlSb; Bulk GaAs; Excitation Geometry; Intense Terahertz;
D O I：
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中图分类号：
学科分类号：
摘要：
Intense terahertz radiation was generated from femtosecond laser-irradiated InAs and GaAs layers on Si substrates. Results show that InAs/Si and GaAs/Si films can be excited in reflection and transmission geometries. The InAs/Si film exhibited weaker emission for both excitation cases but it will be more feasible as a spectroscopic THz source due to the absence of complex spectral features in its emission spectrum. The GaAs/Si emission is characterized by Fabry–Perot oscillations but it is 90% of that of p-InAs bulk crystal emission intensity in the reflection geometry. Excitation fluence measurements showed that the InAs/Si film saturates easily due to the laser’s shallow penetration depth in InAs.
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页码：825 / 829
页数：4
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