Band-to-Band Tunneling by Monte Carlo Simulation for Prediction of MOSFET Gate-Induced Drain Leakage Current

被引：0

作者：

Kan E.C. ^{[1
]}

Narayanan V. ^{[1
]}

Pei G. ^{[1
]}

机构：

[1] School of Electrical and Computer Engineering, Cornell University, Ithaca, 14853, NY

来源：

Journal of Computational Electronics | 2002年 / 1卷 / 1-2期

关键词：

band-to-band tunneling; leakage current; Monte Carlo simulation; MOSFET; source-drain asymmetry;

D O I：

10.1023/A:1020781609514

中图分类号：

学科分类号：

摘要：

Gate induced drain leakage (GIDL) current caused by band-to-band tunneling is studied by Monte Carlo simulation with ballistic least-action trajectory integration. Together with weak inversion and early subthreshold simulation by drift-diffusion formalism, the entire range of the OFF-state drain current can be predicted for technology evaluation. The methodology is demonstrated by a case study for source/drain asymmetry super-halo design. © 2002, Kluwer Academic Publishers.

引用

页码：223 / 226

页数：3

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