Growth and optical properties of ultra-long single-crystalline α-Si3N4 nanobelts

被引:0
作者
W. Yang
L. Zhang
Z. Xie
J. Li
H. Miao
L. An
机构
[1] Tsinghua University,State Key Lab of New Ceramics and Fine Processing
[2] Chinese Academy of Sciences,Laboratory of Excited State Processes, Changchun Institute of Optics, Fine Mechanics and Physics
[3] University of Central Florida,Advanced Materials Processing and Analysis Center (AMPAC)
来源
Applied Physics A | 2005年 / 80卷
关键词
Silicon; Microscopy; Electron Microscopy; Scanning Electron Microscopy; Crystallization;
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摘要
Ultra-long single-crystalline α-Si3N4 nanobelts were synthesized by catalyst-assisted crystallization of polymer-derived amorphous silicon carbonitride (SiCN). The obtained nanobelts were characterized using X-ray diffraction, scanning electron microscopy, high-resolution transmission electron microscopy and selected-area electron diffraction. The results revealed that the α-Si3N4 nanobelts are 20 to 40 nm in thickness, 400–600 nm in width and a few hundreds of micrometers to several millimeters in length, and grow along either the [011] or the [100] direction. Intense visible photoluminescence was observed over a spectrum ranging from 1.65 to 3.01 eV, which can be attributed to defects in the α-Si3N4 structure.
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页码:1419 / 1423
页数:4
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