A model of the mechanism of the chemical interaction of the etchant ion (HF2)– with silicon during its electrochemical etching in hydrofluoric acid solutions

被引：0
作者：
E. N. Abramova
A. M. Khort
A. A. Gvelesiani
A. G. Yakovenko
V. I. Shvets
机构：
[1] Moscow Technological University,Institute of Fine Chemical Technologies
来源：
Doklady Chemistry | 2016年 / 470卷
关键词：
D O I：
暂无
中图分类号：
学科分类号：
摘要：
A model was proposed for the mechanism of the chemical interaction of the etchant ion (HF2)– with silicon during its electrochemical etching, which explains the possibility of porous silicon etching in the dark and the formation of hydride and hydroxyl groups on the silicon surface.
引用
收藏
页码：252 / 254
页数：2
相关论文
共 11 条
[1]  
Memming R.(1966)undefined Surf. Sci. 4 109-124
[2]  
Sckwandt G.(1980)undefined J. Electrochem. Soc. 127 476-483
[3]  
Unagami T.(1992)undefined Surf. Sci. 1 82-92
[4]  
Dubin V.M.(2000)undefined Mater. Sci. Eng., A 69/70 11-22
[5]  
Lehman V.(2014)undefined Zh. Neorg. Khim. 59 1574-1578
[6]  
Stengl R.(undefined)undefined undefined undefined undefined-undefined
[7]  
Luigart A.(undefined)undefined undefined undefined undefined-undefined
[8]  
Abramova E.N.(undefined)undefined undefined undefined undefined-undefined
[9]  
Khort A.M.(undefined)undefined undefined undefined undefined-undefined
[10]  
Gvelesiani A.A.(undefined)undefined undefined undefined undefined-undefined
12