Numerical Analysis of the Influence of Size Upgrading on Oxygen and Carbon Impurities in Casting Silicon

被引：0
作者：
Wenjia Su
Zhen Zhang
Jiulong Li
Zhicheng Guan
Jiaqi Li
机构：
[1] Jiangsu University,School of Energy and Power Engineering
[2] The Institute of Technological Sciences,undefined
[3] Wuhan University,undefined
来源：
Silicon | 2023年 / 15卷
关键词：
Directional solidification method; Silicon; Size upgrade; Oxygen and carbon impurities; Numerical simulation; Solar cells;
D O I：
暂无
中图分类号：
学科分类号：
摘要：
Size upgrading is the main method to increase production capacity and reduce production costs during the directional solidification of silicon ingots. The distributions of oxygen and carbon impurities in G6 and G7 directional solidification furnaces are studied. The simulation results show that the distributions of oxygen and carbon impurities change significantly in the silicon ingot at different growth stages, especially the position of the highest concentration of carbon impurities has shifted. Compared with the G6 furnace, the average concentrations of oxygen and carbon in silicon crystal in the G7 furnace are reduced by 6.7%, and 7.3% respectively. With the growth of silicon crystal, the average concentration of oxygen gradually decreases, while the average concentration of carbon gradually increases.
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页码：4127 / 4135
页数：8
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