N-doped Zn15Sb85 phase-change materials for higher thermal stability and lower power consumption

Comparing to un-doped Zn15Sb85 material, N-doped Zn15Sb85 material had higher crystallization temperature, lower conductivity and better data retention. The optical band gap was derived from the transmittance spectra and a significant increase was observed with increasing nitrogen doping concentration. The measurement of atomic force microscopy indicated that the crystallization was inhibited and the surface of thin films became smoother after N doping. Phase change memory devices based on N-doped Zn15Sb85 thin film were fabricated to test and verify their electrical properties.