InGaAs/AlGaAs QWIP Heterostructures for Large-Format Focal Plane Arrays Photosensitive in the Spectral Range 3–5 μm

被引：0
作者：
A. L. Dudin
N. I. Katsavets
D. M. Krasovitsky
S. V. Kokin
V. P. Chaly
I. V. Shukov
机构：
[1] ZAO Svetlana-Rost,
来源：
Journal of Communications Technology and Electronics | 2018年 / 63卷
关键词：
heterostructure; quantum well; photosensitivity;
D O I：
暂无
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学科分类号：
摘要：
Photoelectric properties of different stressed InGaAs/AlGaAs heterostructures with quantum wells grown by the method of molecular beam epitaxy on GaAs substrates for mid-wavelength infrared largeformat photodetector arrays operating in the spectral range 3–5 μm have been investigated. It has been shown that the change in the composition of barrier layers leads to a significant shift of the photosensitivity spectra of such heterostructures.
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页码：296 / 299
页数：3
相关论文
共 36 条
[1]  
Rogalski A.(2010)undefined J. Modern Optics 57 1716-undefined
[2]  
Shi Z.(2013)undefined Nanoscale Res. Lett. 8 310-undefined
[3]  
Wang L.(1994)undefined Appl. Phys. Lett. 64 478-undefined
[4]  
Zhen H.(2010)undefined J. Opt. Soc. Am. B 27 2428-undefined
[5]  
Fiore A.(2015)undefined Semiconductors 49 224-undefined
[6]  
Roseneher E.(2011)undefined Semiconductors 45 657-undefined
[7]  
Bois P.(2012)undefined Tech. Phys. Lett. 38 436-undefined
[8]  
Wang J.(1990)undefined Appl. Phys. Lett. 56 851-undefined
[9]  
Chen X.(1993)undefined J. Appl. Phys. 74 R1-undefined
[10]  
Li Z.(undefined)undefined undefined undefined undefined-undefined
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