First-principles calculations are performed to determine the effects of zirconium doping on structural, electronic and optical properties of zinc oxide nanotubes. Dielectric tensor is derived within the random phase approximation and optical properties are calculated for both parallel and perpendicular electric field polarizations with respect to nanotube axis. Results show that for all impurity concentrations, the formation energy is negative; hence all doped systems are stable. Energy gap of zirconium-doped single walled zinc oxide nanotube is smaller than their pristine zinc oxide nanotube. Our results show that pristine zinc oxide nanotube is a direct gap semiconductor, while it is an indirect gap when zirconium is doped into zinc oxide nanotube. In Zn1−xZrxOs, the absorption edge has red shift to that of pure zinc oxide nanotube and is located at the visible region. Our results show optical anisotropy of pristine and zirconium-doped zinc oxide nanotube.
机构:
Shanghai Univ, Sch Microelect, Shanghai 201800, Peoples R China
Chinese Acad Sci, Shanghai Inst Tech Phys, State Key Lab Infrared Phys, Shanghai 200083, Peoples R ChinaShanghai Univ, Sch Microelect, Shanghai 201800, Peoples R China
Zhang, Lei
Ge, Xun
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Chinese Acad Sci, Shanghai Inst Tech Phys, State Key Lab Infrared Phys, Shanghai 200083, Peoples R ChinaShanghai Univ, Sch Microelect, Shanghai 201800, Peoples R China
Ge, Xun
Zhou, Xiaohao
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Chinese Acad Sci, Shanghai Inst Tech Phys, State Key Lab Infrared Phys, Shanghai 200083, Peoples R ChinaShanghai Univ, Sch Microelect, Shanghai 201800, Peoples R China
机构:
Royal Inst Technol, Dept Mat Sci & Engn, SE-10044 Stockholm, SwedenRoyal Inst Technol, Dept Mat Sci & Engn, SE-10044 Stockholm, Sweden
Kumar, Mukesh
Persson, Clas
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Royal Inst Technol, Dept Mat Sci & Engn, SE-10044 Stockholm, Sweden
Univ Oslo, Dept Phys, NO-0316 Oslo, NorwayRoyal Inst Technol, Dept Mat Sci & Engn, SE-10044 Stockholm, Sweden
机构:
Shanghai Univ, Sch Microelect, Shanghai 201800, Peoples R China
Chinese Acad Sci, Shanghai Inst Tech Phys, State Key Lab Infrared Phys, Shanghai 200083, Peoples R ChinaShanghai Univ, Sch Microelect, Shanghai 201800, Peoples R China
Zhang, Lei
Ge, Xun
论文数: 0引用数: 0
h-index: 0
机构:
Chinese Acad Sci, Shanghai Inst Tech Phys, State Key Lab Infrared Phys, Shanghai 200083, Peoples R ChinaShanghai Univ, Sch Microelect, Shanghai 201800, Peoples R China
Ge, Xun
Zhou, Xiaohao
论文数: 0引用数: 0
h-index: 0
机构:
Chinese Acad Sci, Shanghai Inst Tech Phys, State Key Lab Infrared Phys, Shanghai 200083, Peoples R ChinaShanghai Univ, Sch Microelect, Shanghai 201800, Peoples R China
机构:
Royal Inst Technol, Dept Mat Sci & Engn, SE-10044 Stockholm, SwedenRoyal Inst Technol, Dept Mat Sci & Engn, SE-10044 Stockholm, Sweden
Kumar, Mukesh
Persson, Clas
论文数: 0引用数: 0
h-index: 0
机构:
Royal Inst Technol, Dept Mat Sci & Engn, SE-10044 Stockholm, Sweden
Univ Oslo, Dept Phys, NO-0316 Oslo, NorwayRoyal Inst Technol, Dept Mat Sci & Engn, SE-10044 Stockholm, Sweden