IR Photodetectors Based on Isoperiodic Epitaxial Layers of Lead Tin Chalcogenides

被引:0
作者
O. N. Tsarenko
A. I. Tkachuk
S. I. Ryabets
机构
[1] Vinnichenko Central Ukrainian State Pedagogical University,
来源
Technical Physics | 2019年 / 64卷
关键词
D O I
暂无
中图分类号
学科分类号
摘要
引用
收藏
页码:368 / 372
页数:4
相关论文
共 50 条
[41]   TEMPERATURE-DEPENDENCE OF THE SURFACE BAND BENDING IN LEAD TIN CHALCOGENIDES [J].
GORIN, EA .
SOVIET PHYSICS SEMICONDUCTORS-USSR, 1983, 17 (05) :530-531
[42]   MECHANISMS OF ABSORPTION BY FREE-CARRIERS IN LEAD-TIN CHALCOGENIDES [J].
PETROVA, OA ;
BARYSHEV, NS ;
NESMELOVA, IM .
SOVIET PHYSICS SEMICONDUCTORS-USSR, 1986, 20 (10) :1130-1134
[43]   Lead salt mid-IR photodetectors with narrow linewidth [J].
Arnold, M ;
Zimin, D ;
Alchalabi, K ;
Zogg, H .
JOURNAL OF CRYSTAL GROWTH, 2005, 278 (1-4) :739-742
[44]   Perovskite Photodetectors Based on p-i-n Junction With Epitaxial Electron-Blocking Layers [J].
Xu, Yubing ;
Wang, Xin ;
Pan, Yuzhu ;
Li, Yuwei ;
Elemike, Elias Emeka ;
Li, Qing ;
Zhang, Xiaobing ;
Chen, Jing ;
Zhao, Zhiwei ;
Lei, Wei .
FRONTIERS IN CHEMISTRY, 2020, 8
[45]   Ultra-violet photodetectors based on GaN and A1xGa1-xN epitaxial layers [J].
Shmidt, NM ;
Lundin, WV ;
Sakharov, AV ;
Usikov, AS ;
Zavarin, EE ;
Govorkov, AV ;
Polyakov, AY ;
Smirnov, NB .
16TH INTERNATIONAL CONFERENCE ON PHOTOELECTRONICS AND NIGHT VISION DEVICES, 2000, 4340 :92-96
[46]   Mid infrared resonant cavity detectors and lasers with epitaxial lead-chalcogenides [J].
Zogg, H. ;
Rahim, M. ;
Khiar, A. ;
Fill, M. ;
Felder, F. ;
Quack, N. .
OPTO-ELECTRONICS REVIEW, 2010, 18 (03) :231-235
[47]   PHOTOLUMINESCENCE OF GAAS EPITAXIAL LAYERS DOPED WITH BOTH SULFUR AND TIN [J].
OBORINA, EI ;
MELEV, VG ;
POROKHOVNICHENKO, LP ;
RAMAZANOV, PE .
INORGANIC MATERIALS, 1986, 22 (01) :1-4
[48]   INFLUENCE OF PRODUCTION CONDITIONS ON THE PROPERTIES OF EPITAXIAL LAYERS OF TIN TELLURIDE [J].
FREIK, DM ;
PERKATYUK, II ;
PAVLYUK, MF ;
CHOBANYUK, VM ;
BORIK, LI ;
MASLYAK, NT .
INORGANIC MATERIALS, 1985, 21 (07) :977-979
[49]   IMPURITY PROFILE IN TIN DOPED GaAs EPITAXIAL LAYERS. [J].
Stareev, G. ;
Andrelowicz, M. ;
Piskorski, M. .
Electron Technology (Warsaw), 1973, 6 (1-2) :125-134
[50]   IR ABSORPTION SPECTRA OF TIN OR LEAD ORGANOMETALLIC COMPOUNDS [J].
BODIOT, D .
REVUE DE CHIMIE MINERALE, 1967, 4 (04) :957-&