UV photoresponse of single ZnO nanowires

被引：0
|
作者：
Y.W. Heo
B.S. Kang
L.C. Tien
D.P. Norton
F. Ren
J.R. La Roche
S.J. Pearton
机构：
[1] University of Florida,Department of Materials Science and Engineering
[2] University of Florida,Department of Chemical Engineering
来源：
Applied Physics A | 2005年 / 80卷
关键词：
Thin Film; Operating Procedure; Electronic Material; Surface State; Decay Time;
D O I：
暂无
中图分类号：
学科分类号：
摘要：
ZnO nanowires grown by site-selected molecular beam epitaxy (MBE) were contacted at both ends by Al/Pt/Au ohmic electrodes. The current–voltage (I–V) and photoresponse characteristics were obtained both in the dark and with ultraviolet (UV, 254 or 366 nm) illumination. The I–V characteristics are ohmic under all conditions, with nanowire conductivity under UV exposure of 0.2 Ω cm. The photoresponse showed only a minor component with long decay times (tens of seconds) thought to originate from surface states. The results show the high quality of material prepared by MBE and the promise of using ZnO nanowire structures for solar-blind UV detection.
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页码：497 / 499
页数：2
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