Abnormal drop in electrical resistivity with impurity doping of single-crystal Ag

被引：0
作者：
Ji Young Kim
Min-Wook Oh
Seunghun Lee
Yong Chan Cho
Jang-Hee Yoon
Geun Woo Lee
Chae-Ryong Cho
Chul Hong Park
Se-Young Jeong
机构：
[1] Pusan National University,Department of Nano Fusion Technology
[2] Korea Electrotechnology Research Institute,Fundamental and Creativity Research Division
[3] Pusan National University,Department of Cogno
[4] Pusan National University,Mechatronics Engineering
[5] Busan center,Crystal Bank Research Institute
[6] Korea Basic Science Institute,Korea Research Institute of Standards and Science & Department of Science of Measurement
[7] University of Science and Technology,Department of Physics Education & RCDAMP
[8] Pusan National University,The Institute of Basic Science
[9] Korea University,undefined
来源：
Scientific Reports | / 4卷
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摘要：
Resistivity is an intrinsic feature that specifies the electrical properties of a material and depends on electron-phonon scattering near room temperature. Reducing the resistivity of a metal to its potentially lowest value requires eliminating grain boundaries and impurities, but to date few studies have focused on reducing the intrinsic resistivity of a pure metal itself. We could reduce the intrinsic resistivity of single-crystal Ag, which has an almost perfect structure, by impurity doping it with Cu. This paper presents our results: resistivity was reduced to 1.35 μΩ·cm at room temperature after 3 mol% Cu-doping of single-crystal Ag. Various mechanisms were examined in an attempt to explain the abnormal behavior.
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