Preparation of Silicon Thin Films of Different Phase Composition from Monochlorosilane as a Precursor by RF Capacitive Plasma Discharge

被引：0
作者：
L. A. Mochalov
R. A. Kornev
A. V. Nezhdanov
A. I. Mashin
A. S. Lobanov
A. V. Kostrov
V. M. Vorotyntsev
A. V. Vorotyntsev
机构：
[1] Institute of Applied Physics of the Russian Academy of Sciences,
[2] Lobachevsky State University of Nizhny Novgorod,undefined
[3] Nizhny Novgorod State Technical University n.a. R.E. Alekseev,undefined
来源：
Plasma Chemistry and Plasma Processing | 2016年 / 36卷
关键词：
PECVD; Monochlorosilane; Raman spectroscopy; Silicon thin films; IR-spectroscopy;
D O I：
暂无
中图分类号：
学科分类号：
摘要：
Monochlorosilane/argon/hydrogen (SiH3Cl-Ar-H2) mixture of different ratios was investigated from the point of PECVD application. RF capacitive plasma discharge of 40.68 MHz frequency was used. The process of deposition was studied by optical emission spectroscopy. The silicon thin films of different phase composition were obtained. The thin films were characterized by Raman-spectroscopy, atomic force microscopy, and secondary ion mass spectrometry. The exhaust gas mixture was analyzed by IR-spectroscopy in outlet of the reactor during PECVD process. The chemical mechanism for the deposition process was also proposed.
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页码：849 / 856
页数：7
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