Additive-aided electrochemical deposition of bismuth telluride in a basic electrolyte

被引:0
作者
Wu-jun Qiu
Sheng-nan Zhang
Tie-jun Zhu
Xin-bing Zhao
机构
[1] Zhejiang University,State Key Laboratory of Silicon Materials, Department of Materials Science and Engineering
来源
International Journal of Minerals, Metallurgy, and Materials | 2010年 / 17卷
关键词
thin films; thermoelectric materials; electrochemical deposition; bismuth telluride; basic electrolyte;
D O I
暂无
中图分类号
学科分类号
摘要
A new basic electrolyte with two cationic plating additives, polydiaminourea and polyaminosulfone, was investigated for the electrochemical deposition of the bismuth telluride film on a nickel-plated copper foil. Tellurium starts to deposit at a higher potential (−0.35 V) than bismuth (−0.5 V) in this electrolyte. The tellurium-to-bismuth ratio increases while the deposition potential declines from −1 to −1.25 V, indicating a kinetically quicker bismuth deposition at higher potentials. The as-deposited film features good adhesion to the substrate and smooth morphology, and has a nearly amorphous crystal structure disclosed by X-ray diffraction patterns.
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页码:489 / 493
页数:4
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