Bias voltage dependence properties of cadmium oxide films deposited by d.c. reactive magnetron sputtering

被引：0

作者：

Babu P.M. ^{[1
]}

Rao G.V. ^{[1
]}

Reddy P.S. ^{[1
]}

Uthanna S. ^{[1
]}

机构：

[1] Department of Physics, Sri Venkateswara University

来源：

Journal of Materials Science: Materials in Electronics | 2004年 / 15卷 / 6期

关键词：

Cadmium; Electrical Resistivity; Substrate Temperature; Bias Voltage; Oxygen Partial Pressure;

D O I：

10.1023/B:JMSE.0000025684.30153.9c

中图分类号：

学科分类号：

摘要：

Cadmium oxide films were grown on glass substrates using d.c. reactive magnetron sputtering technique by sputtering from a metallic cadmium target in an oxygen partial pressure of 1 × 10-3 mbar under various substrate bias voltages. The substrate bias voltage significantly influences the crystallographic structure of the deposited films. The influence of substrate bias voltage on the electrical and optical properties of the films was systematically studied. The films formed at a substrate temperature of 473K and bias voltage of -80V showed an electrical resistivity of 1 × 10-3 Ω cm, optical transmittance of 86%, optical band gap of 2.47 eV and a figure of merit of 7 × 10-3 Ω-1. © 2004 Kluwer Academic Publishers.

引用

页码：389 / 394

页数：5

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