Gettering of gold by samarium and gadolinium in silicon

被引：0
作者：
D. E. Nazyrov
机构：
[1] Mirzo Ulugbek Uzbekistan National University,
来源：
Surface Engineering and Applied Electrochemistry | 2007年 / 43卷 / 3期
关键词：
Gadolinium; Samarium; Apply Electrochemistry; Surface Engineer; Charge Carrier Concentration;
D O I：
10.3103/S1068375507030143
中图分类号：
学科分类号：
摘要：
For the first time, by the methods of tracer atoms, autoradiography, isothermal relaxation of capacity and current, and measurement of conductivity and Hall effect, an effective gettering of gold in silicon was found at combined or sequential diffusion of the rare-earth elements samarium or gadolinium in silicon, in its near-surface layers, where there is a region of high concentration of the IIIA group element, samarium or gadolinium, as well as in the bulk silicon.
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页码：218 / 221
页数：3
相关论文
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