A Numerical Investigation of Heat Suppression in HEMT for Power Electronics Application

被引：0
作者：
L. Arivazhagan
D. Nirmal
P. Pavan Kumar Reddy
J. Ajayan
D. Godfrey
P. Prajoon
Ashok Ray
机构：
[1] Karunya Institute of Technology and Sciences,
[2] SNS College of Technology College in Coimbatore,undefined
[3] Jyothi Engineering College,undefined
[4] Indian Institute of Technology,undefined
来源：
Silicon | 2021年 / 13卷
关键词：
GaN; HEMT; Self-heating; Diamond; Therma resistance;
D O I：
暂无
中图分类号：
学科分类号：
摘要：
In this paper, AlGaN/GaN High Electron Mobility Transistor (HEMT) with stacked passivation (Diamond/SiN) is proposed and investigated. The implementation of stacked passivation in HEMT has been shown to be effective in suppressing self-heating effect. Under the gate-terminal, the peak channel temperature of HEMT with stacked passivation is 384 K, whereas it is 393 K for conventional HEMT. The reduction of channel temperature in the proposed device is attributed to good heat-spreading via diamond. The thermal resistance (RTH) is extracted and it is found that RTH of proposed HEMT is 17% lower than that of the conventional HEMT. The transconductance of the proposed GaN-HEMT is also improved by 12%. Furthermore, the maximum drain current of 800 mA/mm at VGS = 0 V and VDS = 5 V is obtained for the proposed HEMT with a gate length of 0.25 μm. The proposed device is considered as one of the most attractive candidates for future high frequency and high-power applications over a wide range of operating temperatures.
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页码：3039 / 3046
页数：7
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