A 30-nm-gate field-effect transistor

被引：0

作者：

S. V. Obolenskii

M. A. Kitaev

机构：

[1] Nizhegorodskii State University,

来源：

Technical Physics Letters | 2000年 / 26卷

关键词：

GaAs; Transit Time; Cutoff Frequency; Noise Factor; Fabrication Technology;

D O I：

暂无

中图分类号：

学科分类号：

摘要：

The fabrication technology is developed for and characteristics are investigated of a GaAs Schottky-barrier field-effect transistor (SBFET) with an effective gate length of 30 nm. The SBFET power gain cutoff frequency is 150 GHz. The noise factor at 12–37 GHz is comparable with that of two-dimensional electron gas transistors. The theoretical electron transit time under the gate is below 0.1 ps.

引用

页码：408 / 409

页数：1

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