Phosphorus diffusion gettering process of multicrystalline silicon using a sacrificial porous silicon layer

被引：15

作者：

Derbali, Lotfi ^{[1
]}

Ezzaouia, Hatem ^{[1
]}

机构：

[1] Photovoltaïc laboratory, Research and Technology Center of Energy, Hammam-Lif 2050

来源：

Nanoscale Research Letters | 2012年 / 7卷 / 1期

关键词：

Defect density; Gettering; Grain boundaries; Multicrystalline silicon; Porous silicon; WTC-120 lifetime tester;

D O I：

10.1186/1556-276X-7-424

中图分类号：

学科分类号：

摘要：

The aims of this work are to getter undesirable impurities from low-cost multicrystalline silicon (mc-Si) wafers and then enhance their electronic properties. We used an efficient process which consists of applying phosphorus diffusion into a sacrificial porous silicon (PS) layer in which the gettered impurities have been trapped after the heat treatment. As we have expected, after removing the phosphorus-rich PS layer, the electrical properties of the mc-Si wafers were significantly improved. The PS layers, realized on both sides of the mc-Si substrates, were formed by the stain-etching technique. The phosphorus treatment was achieved using a liquid POCl3-based source on both sides of the mc-Si wafers. The realized phosphorus/PS/Si/PS/phosphorus structures were annealed at a temperature ranging between 700 °C and 950 °C under a controlled O2 atmosphere, which allows phosphorus to diffuse throughout the PS layers and to getter eventual metal impurities towards the phosphorusdoped PS layer. The effect of this gettering procedure was investigated by means of internal quantum efficiency and the dark current-voltage (I-V) characteristics. The minority carrier lifetime measurements were made using a WTC-120 photoconductance lifetime tester. The serial resistance and the shunt resistance carried out from the dark I-V curves confirm this gettering-related solar cell improvement. It has been shown that the photovoltaic parameters of the gettered silicon solar cells were improved with regard to the ungettered one, which proves the beneficial effect of this gettering process on the conversion efficiency of the multicrystalline silicon solar cells. © 2012 Lotfi and Hatem; licensee Springer.

引用

共 30 条

[1]

Bakos G.C., Distributed power generation: A case study of small scale PV power plant in Greece, Appl Energy, 86, pp. 1757-1766, (2009)

[2]

Yamaguchi M., Ohshita Y., Arafune K., Sai H., Tachibana M., Present status and future of crystalline silicon solar cells in Japan, Solar Energy, 80, pp. 104-110, (2006)

[3]

Krotkus A., Grigoras K., Pacebutas V., Barsony I., Vazsonyi E., Fried M., Szlufcik J., Nijs J., Levy-Clement C., Efficiency improvement by porous silicon coating of multicristalline silicon solar cells, Sol Energy Mater Sol Cells, 45, pp. 267-273, (1997)

[4]

Yae S., Kobayashi T., Kawagishi T., Fukumuro N., Matsuda H., Antireflective porous layer formation on multicrystalline silicon by metal particle enhanced HF etching, Solar Energy, 80, pp. 701-706, (2006)

[5]

Bastide S., Albu-Yaron A., Strehlke S., Levy-Clement C., Formation and characterization of porous silicon layers for application in multicrystalline silicon solar cells, Sol Energy Mater Sol Cells, 57, (1999)

[6]

Ben Rabha M., Hajjaji A., Bessais B., Improvement of multicrystalline silicon solar cell performance via chemical vapor etching method-based porous silicon nanostructures, Solar Energy, 86, pp. 1411-1415, (2012)

[7]

Macdonald D.H., Cuevas A., Kerr M.J., Samundsett C., Ruby D., Winderbaum S., Leo A., Texturing industrial multicrystalline silicon solar cells, Solar Energy, 76, pp. 277-283, (2004)

[8]

Richards B.S., Rowlands S.F., Ueranatasun A., Cotter J.E., Honsberg C.B., Potential cost reduction of buried-contact solar cells, through the use of titanium dioxide thin films, Solar Energy, 76, pp. 269-276, (2004)

[9]

Ben Rabha M., Bessais B., Enhancement of photovoltaic properties of multicrystalline silicon solar cells by combination of buried metallic contacts and thin porous silicon, Solar Energy, 84, pp. 486-491, (2010)

[10]

Derbali L., Ezzaouia H., Vanadium-based antireflection coated on multicrystalline silicon acting as a passivating layer, Solar Energy, 86, pp. 1504-1510, (2012)

← 1 2 3 →