Transient radiation effects in microwave monolithic integrated circuits based on heterostructure field-effect transistors: Experiment and model

被引：15

作者：

Elesin V.V. ^{[1
]}

机构：

[1] National Research Nuclear University (Moscow Engineering Physical Institute (MEPhI)), ENPO Specialized Electronic Systems (ENPO SPELS), Moscow 115409

来源：

Russian Microelectronics | 2014年 / 43卷 / 2期

关键词：

GaAs; Ionize Radiation; RUSSIAN Microelectronics; Width Increment; Equivalent Dose Rate;

D O I：

10.1134/S106373971402005X

中图分类号：

学科分类号：

摘要：

The results of experimental studies and simulations of transient radiation effects in microwave monolithic integrated circuits, based on heterostructure field-effect transistors, affected by the pulse ionizing radiation, are presented. The physical model, which adequately describes transient radiation effects in field-effect transistors in dose rate range up to 1012 rad/s, is proposed. Based on the physical model, the equivalent electric circuit, taking into account the dominating ionization effects, intended for using in the computer-aided design (CAD), is constructed. The simulated ionizing responses of the microwave low-noise amplifier (LNA) MIC are in accordance with the experimental data. © 2014 Pleiades Publishing, Ltd.

引用

页码：139 / 147

页数：8

共 9 条

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