Electron-electron scattering in stepped quantum wells

被引：0

作者：

V. L. Zerova

L. E. Vorob’ev

G. G. Zegrya

机构：

[1] St. Petersburg State Polytechnical University,Ioffe Physicotechnical Institute

[2] Russian Academy of Sciences,undefined

来源：

Semiconductors | 2004年 / 38卷

关键词：

Magnetic Material; Numerical Data; Electromagnetism; Complex Shape; Principal Mechanism;

D O I：

暂无

中图分类号：

学科分类号：

摘要：

A method for calculating the probability of intersubband electron-electron scattering in quantum wells of complex shape is suggested. Numerical data for stepped InGaAs/AlGaAs quantum wells are obtained. The principal mechanisms of electron-electron scattering that exert the strongest effect on the intersubband inversion of population in laser structures are determined.

引用

页码：689 / 695

页数：6

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