Homogeneous crystalline FeSi2 films of c (4 × 8) phase grown on Si (111) by reactive deposition epitaxy

被引：0
作者：
Zou Z.-Q. [1 ,2 ]
Sun L.-M. [1 ]
Shi G.-M. [1 ]
Liu X.-Y. [1 ,2 ]
Li X. [1 ]
机构：
[1] Center for Analysis and Testing, Shanghai Jiao Tong University, Shanghai 200240
[2] Department of Physics, Shanghai Jiao Tong University, Shanghai 200240
来源：
Zou, Z.-Q. (zqzou@sjtu.edu.cn) | 1600年 / Springer Science and Business Media, LLC卷 / 08期
基金：
中国国家自然科学基金;
关键词：
Iron silicides; Reactive deposition epitaxy; Scanning tunneling spectroscopy; Thin films; X-ray photoelectron spectroscopy;
D O I：
10.1186/1556-276X-8-510
中图分类号：
学科分类号：
摘要：
The growth of iron silicides on Si (111) using reactive deposition epitaxy method was studied by scanning tunneling microscopy and X-ray photoelectron spectroscopy (XPS). Instead of the mixture of different silicide phases, a homogeneous crystalline film of c (4 × 8) phase was formed on the Si (111) surface at approximately 750°C. Scanning tunneling spectra show that the film exhibits a semiconducting character with a band gap of approximately 0.85 eV. Compared with elemental Fe, the Fe 2p peaks of the film exhibit a lower spin-orbit splitting (-0.3 eV) and the Fe 2p3/2 level has a smaller full-width at half maximum (-0.6 eV) and a higher binding energy (+0.3 eV). Quantitative XPS analysis shows that the c (4 × 8) phase is in the FeSi2 stoichiometry regime. The c (4 × 8) pattern could result from the ordered arrangement of defects of Fe vacancies in the buried Fe layers. © 2013 Zou et al.
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页码：1 / 6
页数：5
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