Vector imaging of electric field-induced reversible magnetization reversal in exchange-biased multiferroic heterostructures交换偏置多铁异质结中电场调控可逆性磁化反转的 矢量分析研究

被引:0
作者
Xinger Zhao
Zhongqiang Hu
Ting Fang
Yuxin Cheng
Keqing Shi
Yi-Xin Weng
Yongjun Du
Jingen Wu
Mengmeng Guan
Zhiguang Wang
Ziyao Zhou
Ming Liu
Jing-Ye Pan
机构
[1] Xi’an Jiaotong University,Electronic Materials Research Laboratory, Key Laboratory of the Ministry of Education & International Center for Dielectric Research, School of Electronic Science and Engineering, State Key Laboratory for Mechanical Behavior of Ma
[2] the First Affiliated Hospital of Wenzhou Medical University,Translational Medicine Laboratory
[3] the First Affiliated Hospital of Wenzhou Medical University,Key Laboratory of Intelligent Critical Care and Life Support Research of Zhejiang Province, Department of Intensive Care
来源
Science China Materials | 2022年 / 65卷
关键词
exchange bias; magnetic domains; multiferroics; magnetization reversal;
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中图分类号
学科分类号
摘要
Exchange bias between ferromagnetic and antiferromagnetic layers has been widely utilized in spintronic devices. Controlling the exchange bias in magnetic multilayers by an electric field (E-field) has been proposed as a low-power solution for manipulating the macroscopic properties such as exchange bias fields and magnetization values, while how the magnetic domains respond to the E-fields has rarely been reported in an exchange-biased system. Here, we realize the vector imaging of reversible electrical modulation of magnetization reversal in exchange-biased CoFeB/IrMn/PMN-PT (011) multiferroic heterostructures, utilizing in-situ quantitative magneto-optical Kerr effect (MOKE) microscopy. Under the electrical control, magnetic domains at −80 Oe rotate reversibly between around 160° and 80°–120°, whose transverse components reverse from 225° to 45° correspondingly. Moreover, pixel-by-pixel comparisons are conducted to further imply the reversible magnetization reversal by E-fields. E-field-induced reversible magnetization reversal is also demonstrated without applying external magnetic fields. Vector imaging of electrical manipulation of exchange bias is of great significance in understanding the magnetoelectric effect and the development of next-generation spintronic devices.
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页码:186 / 192
页数:6
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  • [1] Chappert C(2007)The emergence of spin electronics in data storage Nat Mater 6 813-823
  • [2] Fert A(2010)Self-formed exchange bias of switchable conducting filaments in NiO resistive random access memory capacitors ACS Nano 4 3288-3292
  • [3] Van Dau FN(2017)Exchange-biased anisotropic magnetoresistive field sensor IEEE Sens J 17 3309-3315
  • [4] Son JY(2015)Exchange biased magnetoelectric composites for magnetic field sensor application by frequency conversion J Appl Phys 117 17B513-426
  • [5] Kim CH(2008)Towards a magnetoelectric memory Nat Mater 7 425-8861
  • [6] Cho JH(2020)Electric field-tunable giant magnetoresistance (GMR) sensor with enhanced linear range ACS Appl Mater Interfaces 12 8855-238
  • [7] Guo Y(2013)Effect of mechanical strain on magnetic properties of flexible exchange biased FeGa/IrMn heterostructures Appl Phys Lett 102 022412-82
  • [8] Ouyang Y(2018)Evaluation of magnetoelectric sensor systems for cardiological applications Measurement 116 230-529
  • [9] Sato N(2019)Magnetic particle mapping using magnetoelectric sensors as an imaging modality Sci Rep 9 2086-220
  • [10] Röbisch V(2017)Recent progress in voltage control of magnetism: Materials, mechanisms, and performance Prog Mater Sci 87 33-2918