Molecular dynamics study on bulk melting induced by ultrashort pulse laser

被引：0
作者：
Byoung Seo Lee
Seungho Park
Young Ki Choi
Joon Sik Lee
机构：
[1] Seoul National University,School of Mechanical and Aerospace Engineering
[2] Hongik University,Department of Mechanical & System Design Engineering
[3] Chung-Ang University,School of Mechanical Engineering
来源：
Journal of Mechanical Science and Technology | 2011年 / 25卷
关键词：
Molecular dynamics simulation; Homogeneous nucleation; Bulk melting; Voronoi polyhedron;
D O I：
暂无
中图分类号：
学科分类号：
摘要：
Although many researches using nonthermal and thermal models have been conducted on ultrashort pulse laser processing, a promising tool for precision fabrication, an understanding of the underlying mechanism is still needed. The present study, in which molecular dynamics was carried out, accepted a thermal aspect as Tersoff model for silicon does not consider the nonthermal effect due to the electron-hole density. The kinetics of melting from the molecular motions was investigated by Voronoi polyhedron (VP) analysis as a structural tool. The results have shown that the ultrafast melting by the laser with 100 fs pulse is governed by bulk melting homogeneous nucleation. The bulk melting characteristics were revealed in the absence of liquid-solid interface, a melting speed excessively higher than the speed of sound, and kinetics consistent with that of the thermal model on homogeneous nucleation.
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页码：449 / 456
页数：7
相关论文
共 71 条
  • [1] van Vechten J. A.(1979)Nonthermal pulsed laser annealing of Si; plasma annealing Phys. Lett. A 74 422-426
  • [2] Tsu R.(1997)Laser-solid interaction in the femtosecond time regime Appl. Surf. Sci. 109–110 1-10
  • [3] Saris F. W.(1981)Effect of electron-hole pairs on the melting of silicon Phys. Lett. A 84 448-450
  • [4] von der Linde D.(1992)Theory for the instability of the diamond structure of Si, Ge, and C induced by a dense electron-hole plasma Phys. Rev. B 42 7163-7173
  • [5] Sokilowski-Tinten K.(1997)Structural, dynamical, electronic, and bonding properties of laser-heated silicon: an ab initio molecular-dynamics study Phys. Rev. B 56 3806-3812
  • [6] Bialkowski J.(1999)Femtosecond melting and ablation of semiconductors studied with time of flight mass spectroscopy J. of Appl. Phys. 85 3301-3309
  • [7] Bok J.(1992)Dynamical theory of the laser-induced lattice instability of silicon Phys. Rev. B 46 10686-10692
  • [8] Stampfli P.(1982)Instability of the electron-hole plasma in silicon Phys. Rev. Lett. 48 1413-1416
  • [9] Bennemann K. H.(1988)Empirical interatomic potential for silicon with improved elastic properties Phys. Rev. B 38 9902-9905
  • [10] Silverstrelli P. L.(1993)Superheating, melting, and annealing of copper surfaces Phys. Rev. Lett. 71 1023-1027
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