Highly-ordered silicon inverted nanocone arrays with broadband light antireflectance

被引：1
作者：
Dong Zhang
Weina Ren
Zhichao Zhu
Haifeng Zhang
Bo Liu
Wangzhou Shi
Xiaomei Qin
Chuanwei Cheng
机构：
[1] Shanghai Normal University,Department of Physics
[2] Tongji University,Shanghai Key Laboratory of Special Artificial Microstructure Materials and Technology and School of Physics Science and Engineering
来源：
Nanoscale Research Letters | 2015年 / 10卷
关键词：
Inverted nanocone arrays; Antireflection; Nanosphere lithography; Si;
D O I：
暂无
中图分类号：
学科分类号：
摘要：
In this work, highly-ordered silicon inverted nanocone arrays are fabricated by integration of nanosphere lithography with reactive ion etching (RIE) method. The optical characteristics of as-prepared Si inverted nanocone arrays are investigated both by experiments and simulations. It is found that the Si nanocone arrays present excellent broadband light antireflectance properties, which are attributed to the gradient in the effective refractive index of nanocones and enhanced light trapping owing to optical diffraction. The inverted Si nanocone arrays might find a variety of applications in solar cells and photodetectors.
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