Substitutional doping in 2D transition metal dichalcogenides

被引：0
作者：
Leyi Loh
Zhepeng Zhang
Michel Bosman
Goki Eda
机构：
[1] National University of Singapore,Department of Physics
[2] National University of Singapore,Department of Materials Science and Engineering
[3] National University of Singapore,Department of Chemistry
[4] National University of Singapore,Centre for Advanced 2D Materials
来源：
Nano Research | 2021年 / 14卷
关键词：
substitutional doping; transition metal dichalcogenide; two-dimensional semiconductor; acceptor; donor;
D O I：
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学科分类号：
摘要：
Two-dimensional (2D) van der Waals transition metal dichalcogenides (TMDs) are a new class of electronic materials offering tremendous opportunities for advanced technologies and fundamental studies. Similar to conventional semiconductors, substitutional doping is key to tailoring their electronic properties and enabling their device applications. Here, we review recent progress in doping methods and understanding of doping effects in group 6 TMDs (MX2, M = Mo, W; X = S, Se, Te), which are the most widely studied model 2D semiconductor system. Experimental and theoretical studies have shown that a number of different elements can substitute either M or X atoms in these materials and act as n- or p-type dopants. This review will survey the impact of substitutional doping on the electrical and optical properties of these materials, discuss open questions, and provide an outlook for further studies.
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页码：1668 / 1681
页数：13
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