Investigations on rGO on silicon-based UV photon detector

The possibility of using reduced graphene oxide field effect transistor (rGOFET) on a high resistivity silicon as a photon detector in bottom gate FET architecture has been explored in this work. Highly conductive reduced graphene oxide (rGO) is synthesized from graphene oxide (GO) by a hybrid technique using hydroiodic acid (HI) fumes and thermal annealing for 6 h on the substrate itself. The rGOFET device is irradiated from top and bottom at different gate-source voltages ranging between 50 mV and 5 V and a comparison of its performance is done. The fabricated device has shown significant response to photons in the UV range peaking at 256 nm with a responsivity of 0.15 A/W at 5 V when irradiated from top and 0.095 A/W at 5 V when irradiated from bottom. The response time of the device measured is 0.23 s, and recovery time is 0.12 s.