Continuous-wave disk WGM lasers (λ = 3.0 μm) based on InAs/InAsSbP heterostructures

被引：0
作者：
N. S. Averkiev
A. P. Astakhova
E. A. Grebenshchikova
N. D. Il’inskaya
K. V. Kalinina
S. S. Kizhaev
A. Yu. Kislyakova
A. M. Monakhov
V. V. Sherstnev
Yu. P. Yakovlev
机构：
[1] Russian Academy of Sciences,Ioffe Physicotechnical Institute
来源：
Semiconductors | 2009年 / 43卷
关键词：
85.30.-z; 42.79.-e; 42.55.Px;
D O I：
暂无
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学科分类号：
摘要：
IR semiconductor WGM lasers operating in the continuous-wave (CW) mode at a wavelength of 3.04 μm have been fabricated by metal-organic vapor-phase epitaxy on the basis of InAs/InAsSbP heterostructures. Their emission spectra were studied in the temperature range from 77 to 125 K. The lasers operating in the CW mode have a threshold current of 25 mA at a temperature of 77 K. The WGM lasers also work in the pulsed mode up to 125 K. The dynamic range of operation for the disk lasers is substantially extended to currents exceeding the threshold current by a factor of 200.
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页码：117 / 120
页数：3
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