ZnO Films Deposited by Electron-Beam Evaporation: The Effect of Ion Bombardment

被引：5
作者：
Gruzintsev A.N. [1 ]
Volkov V.T. [1 ]
Matveeva L.N. [1 ]
机构：
[1] Inst. Microlectron. Technol. High-P., Russian Academy of Sciences, Chernogolovka, Moscow oblast
来源：
Russian Microelectronics | 2002年 / 31卷 / 3期
关键词：
Evaporation; Sapphire; Substrate Temperature; Carrier Concentration; Bias Voltage;
D O I：
10.1023/A:1015415120927
中图分类号：
学科分类号：
摘要：
The deposition of ZnO films on different substrates by electron-beam evaporation is studied experimentally. The substrate is essentially held at a negative bias voltage during the process. The dependence of the lattice structure and photoluminescence spectra of the films on the type of substrate and the bias is investigated. It is shown that the incident ion stream resulting from the negative bias allows one to produce films at a lower substrate temperature. The bias that provides epitaxial growth is found to lie between -400 and -200 V. It is determined that the films deposited on (0001)-oriented sapphire have a carrier concentration of 7.5 × 1018 cm-3 and a Hall mobility of 18.4 cm2/(V s).
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页码：193 / 199
页数：6
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