Growth temperature dependence of strain in a GaN epilayer, grown on a c-plane sapphire substrate

被引：0
|
作者：
S. I. Cho
K. Chang
M. S. Kwon
机构：
[1] University of Seoul,Department of Chemical Engineering
[2] University of Seoul,Department of Materials Science and Engineering
来源：
Journal of Materials Science | 2008年 / 43卷
关键词：
Strain Component; Biaxial Stress; Metalorganic Chemical Vapor Deposition; Biaxial Strain; Growth Temperature Dependence;
D O I：
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摘要：
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页码：406 / 408
页数：2
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