Surface Passivation of Crystalline Silicon Solar Cells by Cr:ZnO Coating Layers

被引：0

作者：

Moez Salem

Hajar Ghannam

Ahlem Boussaid

Abdullah Almohammedi

Anouar Jbeli

Imen Massoudi

机构：

[1] Département de Physique,Department of physics, University College in AlJumum

[2] Faculté des sciences de Gabes,Department of Physics, Faculty of Science

[3] Materials,Department of Physics, College of Science and Humanities at Al

[4] Systems and Energy Engineering Laboratory (MaSEEL),Ghat

[5] ERCMN,Basic and Applied Scientific Research Center

[6] (UAE/U01FST),Department of Physics, College of Science

[7] Physics department,undefined

[8] Faculty of Sciences of Monastir,undefined

[9] Umm Al-Qura University,undefined

[10] Islamic University of Madinah,undefined

[11] Majmaah University,undefined

[12] Imam Abdulrahman Bin Faisal University,undefined

[13] Imam Abdulrahman Bin Faisal University,undefined

来源：

Silicon | 2024年 / 16卷

关键词：

Passivation; ZnO; Silicon; Reflectivity;

D O I：

暂无

中图分类号：

学科分类号：

摘要：

This article explores the synthesis of ZnO thin films through a straightforward co-precipitation method, both with and without Cr doping, and their subsequent application via spin-coating onto silicon substrates. The investigation focuses on discerning the impact of Cr doping content on the structural and opto-electronic properties of the films. Techniques such as atomic force microscopy (AFM) and X-ray diffraction (XRD) were employed for the analysis of surface morphology and crystal structure. Additionally, methods involving Fourier-transform infrared spectroscopy (FTIR) and photoconductance were utilized to assess surface passivation and reflectivity in both Cr-doped and undoped ZnO films. Notably, the introduction of Chromium doping resulted in a significant enhancement of the effective minority carrier lifetime, elevating it from 1.5 to 88 μs at a minority carrier density (n) of 1014 cm-3. Furthermore, the reflectivity at λ= 500 nm witnessed a reduction from 30% to approximately 7% when silicon was coated with Cr-doped ZnO.

引用

页码：2465 / 2471

页数：6

共 79 条

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