Study on the fabrication process and photoelectric performances of si-based blocked-impurity-band detector

被引：0

作者：

Bingbing Wang

Xiaodong Wang

Yulu Chen

Xiong Yang

Wulin Tong

Chuansheng Zhang

Xiaoyao Chen

Ming Pan

Juncheng Cao

机构：

[1] Chinese Academy of Sciences,Key Laboratory of Terahertz Solid State Technology, Shanghai Institute of Microsystem and Information Technology

[2] University of Chinese Academy of Sciences,Center of Materials Science and Optoelectronics Engineering

[3] Chinese Academy of Sciences,Laboratory of Advanced Material

[4] No. 50 Research Institute of China Electronics Technology Group Corporation,undefined

[5] Fudan University,undefined

来源：

Optical and Quantum Electronics | 2020年 / 52卷

关键词：

Si; Blocked-impurity-band detector; Ion implantation; Rapid thermal annealing; Responsivity; Spectral response;

D O I：

暂无

中图分类号：

学科分类号：

摘要：

The structural model and fabrication process of the Si-based blocked-impurity-band (BIB) detector were proposed. The numerical simulation of phosphorus ion implantation and rapid thermal annealing was investigated. Various implantation conditions were analyzed to meet the requirements of good electrical contact. Moreover, the carrier activation effect of phosphorus ion implantation and rapid thermal annealing was demonstrated by Hall test. Then the relationship between blackbody responsivity and annealing temperature was analyzed. According to the measurement results, the blackbody responsivity and response wavelength range of Si-based BIB detector we fabricated can reach 2.2A/W and 5–45 μm, respectively. Our work shows that the good electrical contact can improve the blackbody responsivity. It provides an effective method to fabricate Si-based BIB detector with good performances.

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