Fabrication and photoelectric properties of oxide/CdTe structures

被引：0
作者：
G. A. Il’chuk
V. I. Ivanov-Omskii
V. Yu. Rud’
Yu. V. Rud’
R. N. Bekimbetov
N. A. Ukrainets
机构：
[1] State University “Lvivs’ka Politekhnica”,Ioffe Physicotechnical Institute
[2] St. Petersburg State Technical University,undefined
[3] Russian Academy of Sciences,undefined
来源：
Semiconductors | 2000年 / 34卷
关键词：
Cadmium; Magnetic Material; Technological Process; Energy Barrier; Electromagnetism;
D O I：
暂无
中图分类号：
学科分类号：
摘要：
A new technological process is proposed for forming an energy barrier in cadmium telluride crystals, and rectifying photosensitive anisotype and isotype structures are obtained. The photoelectric properties of the obtained structures and their dependence on the geometry of illumination with natural or linearly polarized light were investigated and are discussed. The new technology can be applied to the fabrication of different kinds of photoconversion structures based on cadmium telluride.
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页码：1058 / 1061
页数：3
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