Negative crystals of silicon carbide

被引:0
|
作者
V. A. Karachinov
机构
[1] Ya. Mudryi State University,
来源
Technical Physics | 2002年 / 47卷
关键词
Silicon; Carbide; Crystal Structure; Experimental Method; Silicon Carbide;
D O I
暂无
中图分类号
学科分类号
摘要
Systems of negative silicon carbide crystals are classified and studied by experimental methods. The crystal structure and morphology forming during growth, etching, and erosion are discussed.
引用
收藏
页码:432 / 437
页数:5
相关论文
共 50 条
  • [11] Cathodic localization of metal coatings on silicon carbide crystals
    Karachinov, VA
    TECHNICAL PHYSICS LETTERS, 2002, 28 (05) : 439 - 440
  • [12] Cathodic localization of metal coatings on silicon carbide crystals
    V. A. Karachinov
    Technical Physics Letters, 2002, 28 : 439 - 440
  • [13] Lateral enlargement of silicon carbide crystals
    Jacobson, H
    Yakimova, R
    Råback, P
    Syväjärvi, M
    Henry, A
    Tuomi, T
    Janzén, E
    JOURNAL OF CRYSTAL GROWTH, 2004, 270 (1-2) : 7 - 14
  • [15] Nonequilibrium heteroepitaxy of silicon carbide on silicon
    S. A. Kukushkin
    A. V. Osipov
    S. K. Gordeev
    S. B. Korchagina
    Technical Physics Letters, 2005, 31 : 859 - 861
  • [16] SILICON CARBIDE/SILICON AND SILICON CARBIDE/SILICON CARBIDE COMPOSITES PRODUCED BY CHEMICAL VAPOR INFILTRATION
    KMETZ, M
    SUIB, S
    GALASSO, F
    JOURNAL OF THE AMERICAN CERAMIC SOCIETY, 1990, 73 (10) : 3091 - 3093
  • [17] Polytype formation in silicon carbide single crystals
    Li, Xiang-Biao
    Shi, Er-Wei
    Chen, Zhi-Zhan
    Xiao, Bing
    DIAMOND AND RELATED MATERIALS, 2007, 16 (03) : 654 - 657
  • [18] Roentgenoluminescence from silicon carbide
    Babayants, GI
    Babayants, KG
    Popenko, VA
    TECHNICAL PHYSICS, 2004, 49 (12) : 1631 - 1632
  • [19] Photoluminescence of anodized silicon carbide
    V. F. Agekyan
    Yu. A. Stepanov
    A. A. Lebedev
    A. A. Lebedev
    Yu. V. Rud’
    Semiconductors, 1997, 31 : 202 - 203
  • [20] Roentgenoluminescence from silicon carbide
    G. I. Babayants
    K. G. Babayants
    V. A. Popenko
    Technical Physics, 2004, 49 : 1631 - 1632