Radiative Recombination Mechanisms Involving Exciton States of the Direct Fundamental Absorption Edge in Bilayer WSe2

被引:0
|
作者
S. N. Nikolaev
V. S. Krivobok
E. E. Onishchenko
M. A. Chernopitsskii
V. S. Bagaev
机构
[1] Russian Academy of Sciences,Lebedev Physical Institute
来源
Bulletin of the Lebedev Physics Institute | 2019年 / 46卷
关键词
layered semiconductors; luminescence; exciton; multi-particle effects;
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摘要
Methods for production of atomically thin WSe2 films and optical control of their thickness are developed. For two-monolayer-thick WSe2 films, photoluminescence spectra associated with the emission of exciton states of the direct fundamental absorption edge at a temperature of 5–70 K are measured. Along with the emission of intrinsic excitons of the bilayer, new defect-related emission lines are detected.
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页码:233 / 237
页数:4
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