Giant converse magnetoelectric effect in a multiferroic heterostructure with polycrystalline Co2FeSi

被引:21
作者
Fujii, Shumpei [1 ]
Usami, Takamasa [2 ]
Shiratsuchi, Yu [2 ,3 ]
Kerrigan, Adam M. [4 ]
Yatmeidhy, Amran Mahfudh [5 ]
Yamada, Shinya [1 ,2 ]
Kanashima, Takeshi [1 ]
Nakatani, Ryoichi [2 ,3 ]
Lazarov, Vlado K. [4 ]
Oguchi, Tamio [2 ]
Gohda, Yoshihiro [2 ,5 ]
Hamaya, Kohei [1 ,2 ,6 ]
机构
[1] Osaka Univ, Grad Sch Engn Sci, Dept Syst Innovat, 1-3 Machikaneyama, Toyonaka, Osaka 5608531, Japan
[2] Osaka Univ, Grad Sch Engn Sci, Ctr Spintron Res Network, 1-3 Machikaneyama, Toyonaka, Osaka 5608531, Japan
[3] Osaka Univ, Grad Sch Engn, Div Mat & Mfg Sci, Suita, Osaka 5650871, Japan
[4] Univ York, Dept Phys, York YO10 5DD, N Yorkshire, England
[5] Tokyo Inst Technol, Dept Mat Sci & Engn, J1-3 Nagatsuta Cho 4259, Yokohama, Kanagawa 2268502, Japan
[6] Osaka Univ, Inst Open & Transdisciplinary Res Initiat, Div Spintron Res Network, Suita, Osaka 5650871, Japan
关键词
SPIN; MAGNETIZATION; SPINTRONICS; LOGIC;
D O I
10.1038/s41427-022-00389-1
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
To overcome a bottleneck in spintronic applications such as those of ultralow-power magnetoresistive random-access memory devices, the electric-field control of magnetization vectors in ferromagnetic electrodes has shown much promise. Here, we show the giant converse magnetoelectric (CME) effect in a multiferroic heterostructure consisting of the ferromagnetic Heusler alloy Co2FeSi and ferroelectric-oxide Pb(Mg1/3Nb2/3)O-3-PbTiO3 (PMN-PT) for electric-field control of magnetization vectors. Using an in-plane uniaxial magnetic anisotropy of polycrystalline Co2FeSi film grown on PMN-PT(011), the nonvolatile and repeatable magnetization vector switchings in remanent states are demonstrated. The CME coupling coefficient of the polycrystalline Co2FeSi/PMN-PT(011) is over 1.0 x 10(-5) s/m at room temperature, comparable to those of single-crystalline Fe1-xGax/PMN-PT systems. The giant CME effect has been demonstrated by the strain-induced variation in the magnetic anisotropy energy of Co2FeSi with an L2(1)-ordered structure. This approach can lead to a new solution to the reduction in the write power in spintronic memory architectures at room temperature.
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页数:11
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