Miniaturized double-wing △E-effect magnetic field sensors

被引:4
作者
Ilgaz, Fatih [1 ]
Spetzler, Elizaveta [2 ]
Wiegand, Patrick [3 ]
Faupel, Franz [1 ]
Rieger, Robert [3 ]
McCord, Jeffrey [2 ]
Spetzler, Benjamin [4 ]
机构
[1] Univ Kiel, Fac Engn, Chair Multicomponent Mat, Dept Mat Sci, D-24143 Kiel, Germany
[2] Univ Kiel, Fac Engn, Dept Mat Sci, Nanoscale Magnet Mat Magnet Domains, D-24143 Kiel, Germany
[3] Univ Kiel, Fac Engn, Dept Elect & Informat Engn, Networked Elect Syst, D-24143 Kiel, Germany
[4] Ilmenau Univ Technol, Dept Elect Engn & Informat Technol, Micro & Nanoelect Syst, D-98693 Ilmenau, Germany
来源
SCIENTIFIC REPORTS | 2024年 / 14卷 / 01期
关键词
MICROSTRUCTURE; TEMPERATURE; ROUGHNESS;
D O I
10.1038/s41598-024-59015-5
中图分类号
O [数理科学和化学]; P [天文学、地球科学]; Q [生物科学]; N [自然科学总论];
学科分类号
07 ; 0710 ; 09 ;
摘要
Magnetoelastic micro-electromechanical systems (MEMS) are integral elements of sensors, actuators, and other devices utilizing magnetostriction for their functionality. Their sensitivity typically scales with the saturation magnetostriction and inversely with magnetic anisotropy. However, large saturation magnetostriction and small magnetic anisotropy make the magnetoelastic layer highly susceptible to minuscule anisotropic stress. It is inevitably introduced during the release of the mechanical structure during fabrication and severely impairs the device's reproducibility, performance, and yield. To avoid the transfer of residual stress to the magnetic layer, we use a shadow mask deposition technology. It is combined with a free-free magnetoelectric microresonator design to minimize the influence of magnetic inhomogeneity on device performance. Magnetoelectric resonators are experimentally and theoretically analyzed regarding local stress anisotropy, magnetic anisotropy, and the Delta E-effect sensitivity in several resonance modes. The results demonstrate an exceptionally small device-to-device variation of the resonance frequency < 0.2% with large sensitivities comparable with macroscopic Delta E-effect magnetic field sensors. This development marks a promising step towards highly reproducible magnetoelastic devices and the feasibility of large-scale, integrated arrays.
引用
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页数:12
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