An Investigation into the Admittance of MIS-Structures Based on MBE HgCdTe with Quantum Wells

被引：0

作者：

S. M. Dzyadukh

A. V. Voitsekhovskii

S. N. Nesmelov

S. A. Dvoretskii

N. N.Mikhailov

D. I. Gorn

机构：

[1] V. D. Kuznetsov Siberian Physical-Technical Institute at the National Research Tomsk State University,

[2] National Research Tomsk State University,undefined

[3] Semiconductor Physics Institute of the Siberian Branch of the Russian Academy of Sciences,undefined

来源：

Russian Physics Journal | 2013年 / 56卷

关键词：

MIS-structure; HgCdTe; admittance; quantum well; molecular-beam epitaxy;

D O I：

暂无

中图分类号：

学科分类号：

摘要：

The results of investigations into the complex admittance of the MIS-structures based on heteroepitaxial MBE Hg1–xCdxTe with quantum wells (QW) in the test-signal frequency range 1 kHz – 2 МHz at temperatures 8–300 K are reported. The thickness of single HgTe QWs was 5.6 and 7.1 nm, the content in the 35-nm thick barrier layers – 0.65 and 0.62, respectively.

引用

页码：778 / 784

页数：6

共 27 条

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