Study of Ti/Au, Ti/Al/Au, and Ti/Al/Ni/Au ohmic contacts to n-GaN

被引：0

作者：

Z.X. Qin

Z.Z. Chen

Y.Z. Tong

X.M. Ding

X.D. Hu

T.J. Yu

G.Y. Zhang

机构：

[1] Peking University,National Key Laboratory of Artificial Microstructure and Mesoscopic Physics, School of Physics

来源：

Applied Physics A | 2004年 / 78卷

关键词：

Thermal Stability; Formation Mechanism; Ohmic Contact; Good Thermal Stability; Lower Contact;

D O I：

暂无

中图分类号：

学科分类号：

摘要：

The contacts of Ti/Au, Ti/Al/Au, and Ti/Al/Ni/Au films deposited on n-GaN were studied by current–voltage (I–V) and transmission-line-method measurements. The effect of annealing temperature on specific contact resistivity has been investigated by changing the annealing temperature from 400 to 900 °C. Ti/Al/Au and Ti/Al/Ni/Au films were superior to the bilayer (Ti/Au) in ohmic contact characteristics and thermal stability. The Ti/Al/Ni/Au composite showed the best thermal stability due to the fact that Ni plays a more important role than the alloy of Ti/Al in preventing the interdiffusion of Ti, Al, and Au. The lowest contact resistivity (∼10-7Ω cm2) to n-GaN was obtained for the Ti/Al/Ni/Au sample by short-time/high-temperature annealing. The formation mechanism of ohmic contacts to n-GaN is also discussed.

引用

页码：729 / 731

页数：2