The effects of the self-consistent field of electrons and Г–Х-intervalley scattering on resonant tunneling in double-barrier structures

被引：0
作者：
G. F. Karavaev
A. A. Voronkov
机构：
[1] V. D. Kuznetsov Siberian Physical-Technical Institute at Tomsk State University, Izvestiya Vysshikh Uchebnykh Zavedenii, Fizika
来源：
Russian Physics Journal | 2003年 / 46卷 / 1期
基金：
俄罗斯基础研究基金会;
关键词：
GaAs; Field Approximation; Band Spectrum; Resonant Tunneling; Electron Field;
D O I：
10.1023/A:1024060905260
中图分类号：
学科分类号：
摘要：
The self-consistent electron field approximation is used to calculate the current-voltage characteristics and electron-transmission and tunneling-time spectra in GaAs/AlAs (001) semiconductor heterostructures within the three-valley effective-mass model and to study the effect of the composite band spectrum of GaAs and AlAs materials. © 2003 Plenum Publishing Corporation.
引用
收藏
页码：81 / 90
页数：9
相关论文
共 19 条
[1]  
Finley I.I., Teissier R.J., Skolnick M.S., Et al., Phys. Rev. B, 58, (1998)
[2]  
Petrov M.V., Parihar S.R., Lyon S.A., Phys. Rev. B., 54, (1996)
[3]  
Finley I.I., Teissier R.J., Skolnick M.S., Et al., Phys. Rev. B., 54, (1996)
[4]  
Osotchan T., Chin U.W.I., Tansley Y.I., Phys. Rev. B., 54, (1996)
[5]  
Stovneng T., Lipavsky P., Phys. Rev. B., 49, (1994)
[6]  
Ando T., Wakahara S., Akera H., Phys. Rev. B., 40, (1989)
[7]  
Ando T., Akera H., Phys. Rev. B., 40, (1989)
[8]  
Karavaev G.F., Grinyaev S.N., Chernyshov V.N., Russ. Phys. J., 9, pp. 830-841, (1992)
[9]  
Karavaev G.F., Grinyaev S.N., Chernyshov V.N., Fiz. Tekh. Poluprovodn., 28, (1993)
[10]  
Ting D.Z., McGill T.C., J. Vac. Sci. Technol. B., 7, (1989)
12