GaInAsP/InP-Based Laser Power Converters (λ = 1064 nm)

被引：0
作者：
V. P. Khvostikov
S. V. Sorokina
N. S. Potapovich
R. V. Levin
A. E. Marichev
N. Kh. Timoshina
B. V. Pushnyi
机构：
[1] Ioffe Institute,
来源：
Semiconductors | 2018年 / 52卷
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摘要：
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页码：1748 / 1753
页数：5
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