In-situ investigations on the SILAR-growth of ZnS films as studied by tapping mode atomic force microscopy

被引：0

作者：

R. Resch

G. Friedbacher

M. Grasserbauer

T. Kanniainen

S. Lindroos

M. Leskelä

L. Niinistö

机构：

[1] Institute of Analytical Chemistry,

[2] Vienna University of Technology,undefined

[3] Getreidemarkt 9/151,undefined

[4] A-1060 Wien,undefined

[5] Austria,undefined

[6] Department of Chemistry,undefined

[7] University of Helsinki,undefined

[8] P.O. Box 55,undefined

[9] FIN-00014 Helsinki,undefined

[10] Finland,undefined

[11] Laboratory of Inorganic and Analytical Chemistry,undefined

[12] Helsinki University of Technology,undefined

[13] FIN-02150 Espoo,undefined

[14] Finland,undefined

来源：

Fresenius' Journal of Analytical Chemistry | 1997年 / 358卷

关键词：

Control Valve; Contact Mode; Imaging Artefact; Deposition Cycle; Ionic Layer;

D O I：

暂无

中图分类号：

学科分类号：

摘要：

Tapping mode atomic force microscopy (TM-AFM) has been successfully used for in-situ imaging of the deposition of ZnS films with the successive ionic layer adsorption and reaction (SILAR) method. The films were deposited in-situ using the commercial TM-AFM liquid cell as a flow-through reactor. The potential of TM-AFM has been used to study the growth of ZnS on different substrates up to 50 SILAR cycles. Reactants and rinsing water were alternately exchanged in the cell by a computer controlled valve system. In comparison to earlier work performed with the conventional AFM operated in contact mode, imaging artefacts introduced by lateral shear forces can be largely eliminated with TM-AFM. On glass the roughness is observed to decrease initially until typical island formation takes place at a larger number of deposition cycles. On mica island formation can be observed right from the beginning of the process and the roughness increases with increasing number of deposition cycles.

引用

页码：80 / 84

页数：4