Impurity photovoltaic effect in silicon with multicharge Mn clusters

被引：5

作者：

Bakhadyrkhanov M.K. ^{[1
]}

Iliev Kh.M. ^{[1
]}

Tachilin S.A. ^{[1
]}

Nasriddinov S.S. ^{[1
]}

Abdurakhmanov B.A. ^{[1
]}

机构：

[1] Abu Raikhan Beruni Tashkent State Technical University, Tashkent

来源：

Applied Solar Energy | 2008年 / 44卷 / 2期

关键词：

Charge State; Boron Concentration; Impurity Band; Apply Solar Energy; Atomic Manganese;

D O I：

10.3103/S0003701X08020151

中图分类号：

学科分类号：

摘要：

A new approach to formation of the impurity energy band is proposed that allows the solar IR spectrum to be utilized to generate the subband photocarriers. The essence of the proposed approach is the control in a wide range of the charge state of the atomic manganese (Mn) 4 +n nanoclusters in the Si lattice. The creation of the 0.32-eV-wide impurity energy gap based on (Mn) 4 +n in the Si bandgap is established. © 2008 Allerton Press, Inc.

引用

页码：132 / 134

页数：2

共 12 条

[1]

Saidov M.S., Geliotekhnika, 3, pp. 3-6, (2003)

[2]

Keevers M.J., Green M.A., J. Appl. Phys., 75, pp. 4022-4031, (1994)

[3]

Luque A., Marti A., Phys. Rev. Lett., 78, pp. 5014-5017, (1997)

[4]

Beaucarne G., Brown A.S., Keevers M.J., Et al., Prog. Photovolt. Res. Appl., 10, pp. 345-353, (2002)

[5]

Milis A., Deep Impurities in Semiconductors, (1973)

[6]

Boltaks B.I., Bakhadyrkhanov M.K., Gorodetskii S.S., Kulikov G.S., Kompensirovannyi Kremnii, (1972)

[7]

Saidov M.S., Geliotekhnika, 2, pp. 15-17, (2006)

[8]

Saidov M.S., Geliotekhnika, 1, pp. 56-61, (2004)

[9]

Saidov A.S., Saidov M.S., Shamirzaev T.S., Geliotekhnika, 3, pp. 72-75, (2005)

[10]

Ludwig G.W., Woodbury H.H., Solid. Stat. Phys., 13, (1962)

← 1 2 →